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Inventi Impact: VLSI

Articles

  • Inventi:evs/34/12
    A SIGE BICMOS INSTRUMENTATION CHANNEL FOR EXTREME ENVIRONMENT APPLICATIONS
    31-Dec-2011 Research 2012 : January - March
    Chandra devi Ulaganathan, Neena Nambiar, Kimberly Cornett, Robert L Greenwell, Jeremy A Yager, Benjamin S Prothro, Kevin Tham, Suheng Chen, Richard S Broughton, Guoyuan Fu, Benjamin J Blalock, Charles L Britton Jr, M Nance Ericson, H Alan Mantooth, Mohammad M Mojarradi, Richard W Berger, John D Cressler6

    An instrumentation channel is designed, implemented, and tested in a 0.5-�µm SiGe BiCMOS process. The circuit features a reconfigurable Wheatstone bridge network that interfaces an assortment of external sensors to signal processing circuits. Also, analog sampling is implemented in the channel using a flying capacitor configuration. The analog samples are digitized by a lowpower multichannel A/D converter. Measurement results show that the instrumentation channel supports input signals up to 200 Hz and operates across a wide temperature range of -180?C to 125?C. This work demonstrates the use of a commercially available first generation SiGe BiCMOS process in designing circuits suitable for extreme environment applications.

    How to Cite this Article
    CC Compliant Citation: Chandradevi Ulaganathan, Neena\nNambiar, Kimberly Cornett, et al., â??A SiGe BiCMOS\nInstrumentation Channel for Extreme Environment\nApplications,â? VLSI Design, vol. 2010, Article ID 156829, 12\npages, 2010. doi:10.1155/2010/156829
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